Technische Details NSBC144EPDXV6T5G onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Resistor - Base (R1): 47kOhms, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Supplier Device Package: SOT-563, Resistor - Emitter Base (R2): 47kOhms.
Weitere Produktangebote NSBC144EPDXV6T5G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
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NSBC144EPDXV6T5G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT563Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Resistor - Base (R1): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 47kOhms |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC144EPDXV6T5G |
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Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 47kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


