| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.23 EUR |
| 10+ | 18.62 EUR |
| 60+ | 17.15 EUR |
| 120+ | 16.02 EUR |
| 510+ | 13.53 EUR |
| 1020+ | 12.61 EUR |
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Technische Details NSF080120L4A0Q Nexperia
Description: NSF080120L4A0/SOT8071/TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V, Power Dissipation (Max): 183W (Tc), Vgs(th) (Max) @ Id: 2.9V @ 2mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V.
Weitere Produktangebote NSF080120L4A0Q nach Preis ab 23 EUR bis 32.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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NSF080120L4A0Q | Nexperia USA Inc. |
 Description: NSF080120L4A0/SOT8071/TO247-4LPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 2mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSF080120L4A0Q |
|
Hersteller: Nexperia USA Inc.
Description: NSF080120L4A0/SOT8071/TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Description: NSF080120L4A0/SOT8071/TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.52 EUR |
| 10+ | 23 EUR |