| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.83 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.3 EUR |
| 1000+ | 0.18 EUR |
| 2500+ | 0.15 EUR |
| 8000+ | 0.13 EUR |
| 24000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSR10T406MX2WT5G onsemi
Description: DIODE SCHOTTKY 40V 1A 2-X2DFNW, Current - Reverse Leakage @ Vr: 10 µA @ 40 V, Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 40 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: 2-X2DFNW (1.6x0.8), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 255pF @ 1V, 1MHz, Technology: Schottky, Reverse Recovery Time (trr): 74 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 2-XDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSR10T406MX2WT5G nach Preis ab 0.11 EUR bis 0.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NSR10T406MX2WT5G | ON Semiconductor |
 Schottky Barrier Diode |
auf Bestellung 28624 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSR10T406MX2WT5G | ON Semiconductor |
Schottky Barrier Diode |
auf Bestellung 6880 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| NSR10T406MX2WT5G | ON Semiconductor |
Schottky Barrier Diode |
auf Bestellung 28682 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
| NSR10T406MX2WT5G | onsemi |
Description: DIODE SCHOTTKY 40V 1A 2-X2DFNW Current - Reverse Leakage @ Vr: 10 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 2-X2DFNW (1.6x0.8) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 255pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 74 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Tape & Reel (TR) |
auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| NSR10T406MX2WT5G | onsemi |
Description: DIODE SCHOTTKY 40V 1A 2-X2DFNW Package / Case: 2-XDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 2-X2DFNW (1.6x0.8) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 255pF @ 1V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 74 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 79990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NSR10T406MX2WT5G |
|
Hersteller: ON Semiconductor
Schottky Barrier Diode
Schottky Barrier Diode
auf Bestellung 28624 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5367+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
| NSR10T406MX2WT5G |
|
Hersteller: ON Semiconductor
Schottky Barrier Diode
Schottky Barrier Diode
auf Bestellung 6880 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5367+ | 0.12 EUR |
| NSR10T406MX2WT5G |
|
Hersteller: ON Semiconductor
Schottky Barrier Diode
Schottky Barrier Diode
auf Bestellung 28682 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5367+ | 0.12 EUR |
| 10000+ | 0.11 EUR |
| NSR10T406MX2WT5G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A 2-X2DFNW
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 2-X2DFNW (1.6x0.8)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1A 2-X2DFNW
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 2-X2DFNW (1.6x0.8)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.15 EUR |
| 16000+ | 0.14 EUR |
| 24000+ | 0.13 EUR |
| 56000+ | 0.12 EUR |
| NSR10T406MX2WT5G |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A 2-X2DFNW
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 2-X2DFNW (1.6x0.8)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
Description: DIODE SCHOTTKY 40V 1A 2-X2DFNW
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 2-X2DFNW (1.6x0.8)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 255pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 74 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 79990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.2 EUR |
| 2000+ | 0.18 EUR |