NSS12601CF8T1G onsemi
Hersteller: onsemi
Description: TRANS NPN 12V 6A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: ChipFET™
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 830 mW
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Technische Details NSS12601CF8T1G onsemi
Description: TRANS NPN 12V 6A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: ChipFET™, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 830 mW.
Weitere Produktangebote NSS12601CF8T1G nach Preis ab 0.56 EUR bis 1.65 EUR
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NSS12601CF8T1G | onsemi |
Description: TRANS NPN 12V 6A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: ChipFET™ Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 830 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS12601CF8T1G | ON Semiconductor |
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auf Bestellung 3315 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS12601CF8T1G |
|
Hersteller: onsemi
Description: TRANS NPN 12V 6A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: ChipFET™
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 830 mW
Description: TRANS NPN 12V 6A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: ChipFET™
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 830 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.65 EUR |
| 16+ | 1.11 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.56 EUR |
| NSS12601CF8T1G |
|
Hersteller: ON Semiconductor
auf Bestellung 3315 Stücke:
Lieferzeit 21-28 Tag (e)