NSS1C200MZ4T1G onsemi
Hersteller: onsemi
Description: TRANS PNP 100V 2A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Technische Details NSS1C200MZ4T1G onsemi
Description: TRANS PNP 100V 2A SOT223, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Part Status: Active, Supplier Device Package: SOT-223 (TO-261), Frequency - Transition: 120MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSS1C200MZ4T1G nach Preis ab 0.37 EUR bis 1.06 EUR
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NSS1C200MZ4T1G | onsemi |
Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN |
auf Bestellung 1000 Stücke: Lieferzeit 118-122 Tag (e) |
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NSS1C200MZ4T1G | onsemi |
Description: TRANS PNP 100V 2A SOT223 Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-223 (TO-261) Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 6069 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS1C200MZ4T1G | ON Semiconductor |
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auf Bestellung 155 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS1C200MZ4T1G |
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Hersteller: onsemi
Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
auf Bestellung 1000 Stücke:
Lieferzeit 118-122 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.01 EUR |
| 10+ | 0.89 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.38 EUR |
| 10000+ | 0.37 EUR |
| NSS1C200MZ4T1G |
|
Hersteller: onsemi
Description: TRANS PNP 100V 2A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 100V 2A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 6069 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 20+ | 0.9 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.49 EUR |
| NSS1C200MZ4T1G |
|
Hersteller: ON Semiconductor
auf Bestellung 155 Stücke:
Lieferzeit 21-28 Tag (e)