NSS20101JT1G ON Semiconductor
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1048+ | 0.14 EUR |
| 1058+ | 0.13 EUR |
| 1780+ | 0.073 EUR |
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Technische Details NSS20101JT1G ON Semiconductor
Description: TRANS NPN 20V 1A SC-89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Frequency - Transition: 350MHz, Supplier Device Package: SC-89-3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 300 mW.
Weitere Produktangebote NSS20101JT1G nach Preis ab 0.065 EUR bis 0.51 EUR
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NSS20101JT1G | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 20V 1A 300mW 3-Pin SC-89 T/R |
auf Bestellung 1798 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS20101JT1G | Hersteller : onsemi |
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) |
auf Bestellung 1782 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20101JT1G | Hersteller : onsemi |
Description: TRANS NPN 20V 1A SC-89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 350MHz Supplier Device Package: SC-89-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 300 mW |
auf Bestellung 1006 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20101JT1G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 20V 1A 300mW 3-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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NSS20101JT1G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 20V 1A 300mW 3-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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NSS20101JT1G | Hersteller : onsemi |
Description: TRANS NPN 20V 1A SC-89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 350MHz Supplier Device Package: SC-89-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |
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| NSS20101JT1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 20V; 1A; 0.3W; SC89 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.3W Collector current: 1A Collector-emitter voltage: 20V Polarisation: bipolar Case: SC89 Type of transistor: NPN |
Produkt ist nicht verfügbar |