NSS20101JT1G ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1048+ | 0.17 EUR |
| 1068+ | 0.15 EUR |
| 1780+ | 0.092 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSS20101JT1G ON Semiconductor
Description: TRANS NPN 20V 1A SC-89-3, Power - Max: 300 mW, Voltage - Collector Emitter Breakdown (Max): 20 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: SC-89-3, Frequency - Transition: 350MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-89, SOT-490, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSS20101JT1G nach Preis ab 0.077 EUR bis 0.61 EUR
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NSS20101JT1G | ON Semiconductor |
 Trans GP BJT NPN 20V 1A 300mW 3-Pin SC-89 T/R |
auf Bestellung 1798 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS20101JT1G | onsemi |
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) |
auf Bestellung 1782 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS20101JT1G | onsemi |
Description: TRANS NPN 20V 1A SC-89-3 Power - Max: 300 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SC-89-3 Frequency - Transition: 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
auf Bestellung 1006 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS20101JT1G |
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Hersteller: ON Semiconductor
Trans GP BJT NPN 20V 1A 300mW 3-Pin SC-89 T/R
Trans GP BJT NPN 20V 1A 300mW 3-Pin SC-89 T/R
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 393+ | 0.44 EUR |
| 510+ | 0.33 EUR |
| 514+ | 0.31 EUR |
| 1048+ | 0.14 EUR |
| 1068+ | 0.13 EUR |
| 1780+ | 0.077 EUR |
| NSS20101JT1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT)
Bipolar Transistors - BJT 20V NPN LOW VCE(SAT)
auf Bestellung 1782 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.5 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.44 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.11 EUR |
| 6000+ | 0.099 EUR |
| NSS20101JT1G |
|
Hersteller: onsemi
Description: TRANS NPN 20V 1A SC-89-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SC-89-3
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 1A SC-89-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SC-89-3
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
auf Bestellung 1006 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 0.61 EUR |
| 58+ | 0.37 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |