| Anzahl | Preis |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSS20501UW3T2G onsemi
Description: TRANS NPN 20V 5A 3WDFN, Packaging: Tape & Reel (TR), Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 125mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V, Frequency - Transition: 150MHz, Supplier Device Package: 3-WDFN (2x2), Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 875 mW.
Weitere Produktangebote NSS20501UW3T2G nach Preis ab 0.37 EUR bis 1.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NSS20501UW3T2G | onsemi |
 Description: TRANS NPN 20V 5A 3WDFNPackaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 125mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-WDFN (2x2) Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 875 mW |
auf Bestellung 1253 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| NSS20501UW3T2G |
|
auf Bestellung 348 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS20501UW3T2G |
|
Hersteller: onsemi
Description: TRANS NPN 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
Description: TRANS NPN 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 125mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| NSS20501UW3T2G |
|
auf Bestellung 348 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH