NSS30100LT1G onsemi
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 310 mW
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
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Technische Details NSS30100LT1G onsemi
Description: TRANS PNP 30V 1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 310 mW.
Weitere Produktangebote NSS30100LT1G nach Preis ab 0.17 EUR bis 0.67 EUR
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NSS30100LT1G | onsemi |
Description: TRANS PNP 30V 1A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount |
auf Bestellung 5351 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS30100LT1G | onsemi |
Bipolar Transistors - BJT 2A 30V Low VCEsat |
auf Bestellung 3537 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS30100LT1G | ON |
09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS30100LT1G |
|
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Description: TRANS PNP 30V 1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
auf Bestellung 5351 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.65 EUR |
| 41+ | 0.44 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.21 EUR |
| NSS30100LT1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 2A 30V Low VCEsat
Bipolar Transistors - BJT 2A 30V Low VCEsat
auf Bestellung 3537 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.67 EUR |
| 10+ | 0.49 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
| NSS30100LT1G |
|
Hersteller: ON
09+
09+
auf Bestellung 3018 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH