NSS35200MR6T1G onsemi
Hersteller: onsemiDescription: TRANS PNP 35V 2A 6-TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
auf Bestellung 357599 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1565+ | 0.32 EUR |
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Technische Details NSS35200MR6T1G onsemi
Description: TRANS PNP 35V 2A 6-TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V, Frequency - Transition: 100MHz, Supplier Device Package: 6-TSOP, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 35 V, Power - Max: 625 mW.
Weitere Produktangebote NSS35200MR6T1G nach Preis ab 0.30 EUR bis 0.98 EUR
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NSS35200MR6T1G | Hersteller : onsemi |
Bipolar Transistors - BJT 2A 35V Low VCEsat |
auf Bestellung 3696 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS35200MR6T1G | Hersteller : ON |
07+; |
auf Bestellung 8600 Stücke: Lieferzeit 21-28 Tag (e) |
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NSS35200MR6T1G | Hersteller : onsemi |
Description: TRANS PNP 35V 2A 6-TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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NSS35200MR6T1G | Hersteller : onsemi |
Description: TRANS PNP 35V 2A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |