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NSS40200UW6T1G

NSS40200UW6T1G onsemi

nss40200uw6-d.pdf Hersteller: onsemi
Description: TRANS PNP 40V 2A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 875 mW
auf Bestellung 219202 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1045+0.71 EUR
Mindestbestellmenge: 1045
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Technische Details NSS40200UW6T1G onsemi

Description: TRANS PNP 40V 2A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: 6-WDFN (2x2), Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 875 mW.

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NSS40200UW6T1G Hersteller : ON Semiconductor nss40200uw6-d.pdf
auf Bestellung 1700 Stücke:
Lieferzeit 21-28 Tag (e)
NSS40200UW6T1G NSS40200UW6T1G Hersteller : ON Semiconductor nss40200uw6-d.pdf Trans GP BJT PNP 40V 2A 3000mW 6-Pin WDFN EP T/R
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NSS40200UW6T1G NSS40200UW6T1G Hersteller : onsemi nss40200uw6-d.pdf Description: TRANS PNP 40V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 875 mW
Produkt ist nicht verfügbar
NSS40200UW6T1G NSS40200UW6T1G Hersteller : ON Semiconductor NSS40200UW6-D-1286968.pdf Bipolar Transistors - BJT WDFN6 2*2 LOW VCE (SAT) TR
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