NSS40300DDR2G onsemi
Hersteller: onsemiDescription: TRANS 2PNP DUAL 40V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.59 EUR |
| 5000+ | 0.55 EUR |
| 7500+ | 0.52 EUR |
| 12500+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSS40300DDR2G onsemi
Description: TRANS 2PNP DUAL 40V 3A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 653mW, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote NSS40300DDR2G nach Preis ab 0.47 EUR bis 2.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSS40300DDR2G | Hersteller : onsemi |
Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP |
auf Bestellung 3817 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
NSS40300DDR2G | Hersteller : onsemi |
Description: TRANS 2PNP DUAL 40V 3A 8-SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 24947 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| NSS40300DDR2G | Hersteller : ON Semiconductor |
|
auf Bestellung 398 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
|
|
NSS40300DDR2G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 3A 783mW Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
NSS40300DDR2G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 40V 3A 783mW Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |

