NSS40302PDR2G onsemi
Hersteller: onsemi
Description: TRANS NPN/PNP 40V 3A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
| Anzahl | Preis |
|---|---|
| 2500+ | 0.75 EUR |
| 5000+ | 0.69 EUR |
| 7500+ | 0.68 EUR |
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Technische Details NSS40302PDR2G onsemi
Description: TRANS NPN/PNP 40V 3A 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 653mW, Current - Collector (Ic) (Max): 3A, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote NSS40302PDR2G nach Preis ab 0.72 EUR bis 2.75 EUR
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NSS40302PDR2G | onsemi |
Description: TRANS NPN/PNP 40V 3A 8-SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 653mW Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 88233 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS40302PDR2G | onsemi |
Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A |
auf Bestellung 8152 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS40302PDR2G | ONN |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS40302PDR2G |
|
Hersteller: onsemi
Description: TRANS NPN/PNP 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
Description: TRANS NPN/PNP 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 88233 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.71 EUR |
| 11+ | 1.71 EUR |
| 100+ | 1.15 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.83 EUR |
| NSS40302PDR2G |
|
Hersteller: onsemi
Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A
Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A
auf Bestellung 8152 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.75 EUR |
| 10+ | 1.74 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.84 EUR |
| 2500+ | 0.76 EUR |
| 5000+ | 0.72 EUR |
| NSS40302PDR2G |
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Hersteller: ONN
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH