
auf Bestellung 526 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 1.75 EUR |
10+ | 1.56 EUR |
100+ | 1.22 EUR |
500+ | 1.01 EUR |
1000+ | 0.80 EUR |
3000+ | 0.68 EUR |
24000+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSS40600CF8T1G onsemi
Description: TRANS PNP 40V 6A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 220mV @ 400mA, 4A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: ChipFET™, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 830 mW.
Weitere Produktangebote NSS40600CF8T1G nach Preis ab 0.76 EUR bis 2.01 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NSS40600CF8T1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 400mA, 4A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: ChipFET™ Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 830 mW |
auf Bestellung 970 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
![]() |
NSS40600CF8T1G | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
NSS40600CF8T1G | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||
![]() |
NSS40600CF8T1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 400mA, 4A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: ChipFET™ Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 830 mW |
Produkt ist nicht verfügbar |