NSS60100DMTTBG ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1473+ | 0.45 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1473 Stücke
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Produktbewertung abgeben
Technische Details NSS60100DMTTBG ON Semiconductor
Description: TRANS 2PNP 60V 1A, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2.27W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: 6-WDFN (2x2), Part Status: Active.
Weitere Produktangebote NSS60100DMTTBG nach Preis ab 0.43 EUR bis 1.68 EUR
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NSS60100DMTTBG | ON Semiconductor |
 Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60100DMTTBG | onsemi |
Description: TRANS 2PNP 60V 1A Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
auf Bestellung 5413 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60100DMTTBG | onsemi |
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS60100DMTTBG |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R
Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1473+ | 0.45 EUR |
| NSS60100DMTTBG |
|
Hersteller: onsemi
Description: TRANS 2PNP 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Description: TRANS 2PNP 60V 1A
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
auf Bestellung 5413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.26 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.48 EUR |
| NSS60100DMTTBG |
|
Hersteller: onsemi
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.68 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.43 EUR |