NSS60100DMTTBG ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1473+ | 0.36 EUR |
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Technische Details NSS60100DMTTBG ON Semiconductor
Description: TRANS 2PNP 60V 1A, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2.27W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: 6-WDFN (2x2), Part Status: Active.
Weitere Produktangebote NSS60100DMTTBG nach Preis ab 0.36 EUR bis 1.41 EUR
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NSS60100DMTTBG | Hersteller : ON Semiconductor |
 Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60100DMTTBG | Hersteller : onsemi |
Description: TRANS 2PNP 60V 1A Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
auf Bestellung 5413 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60100DMTTBG | Hersteller : onsemi |
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60100DMTTBG | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NSS60100DMTTBG | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NSS60100DMTTBG | Hersteller : onsemi |
Description: TRANS 2PNP 60V 1A Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
Produkt ist nicht verfügbar |
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| NSS60100DMTTBG | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6 Application: automotive industry Polarisation: bipolar Mounting: SMD Type of transistor: PNP x2 Case: WDFN6 Kind of package: reel; tape Power dissipation: 2.27W Collector current: 1A Collector-emitter voltage: 60V |
Produkt ist nicht verfügbar |