Technische Details NSS60100DMTTBG ON Semiconductor
Description: TRANS 2PNP 60V 1A, Part Status: Active, Supplier Device Package: 6-WDFN (2x2), Frequency - Transition: 155MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 1A, Power - Max: 2.27W, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-WDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSS60100DMTTBG nach Preis ab 0.43 EUR bis 1.68 EUR
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NSS60100DMTTBG | ON Semiconductor |
 Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60100DMTTBG | onsemi |
Description: TRANS 2PNP 60V 1A Part Status: Active Supplier Device Package: 6-WDFN (2x2) Frequency - Transition: 155MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 60V Current - Collector (Ic) (Max): 1A Power - Max: 2.27W Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 5413 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60100DMTTBG | onsemi |
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSS60100DMTTBG |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R
Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1473+ | 0.44 EUR |
| NSS60100DMTTBG |
|
Hersteller: onsemi
Description: TRANS 2PNP 60V 1A
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 60V 1A
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Frequency - Transition: 155MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 2.27W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 5413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.26 EUR |
| 20+ | 1.07 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.48 EUR |
| NSS60100DMTTBG |
|
Hersteller: onsemi
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.68 EUR |
| 10+ | 1.05 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.43 EUR |