Technische Details NSS60600MZ4T3G ON Semiconductor
Description: TRANS PNP 60V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223 (TO-261), Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote NSS60600MZ4T3G nach Preis ab 0.35 EUR bis 1.61 EUR
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NSS60600MZ4T3G | onsemi |
 Description: TRANS PNP 60V 6A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60600MZ4T3G | ON Semiconductor |
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 3991 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60600MZ4T3G | ON Semiconductor |
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60600MZ4T3G | onsemi |
Description: TRANS PNP 60V 6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 7446 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60600MZ4T3G | onsemi |
Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 6.0A |
auf Bestellung 7535 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 3340 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS60600MZ4T3G |
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Hersteller: onsemi
Description: TRANS PNP 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS PNP 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.37 EUR |
| NSS60600MZ4T3G |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 3991 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1560+ | 0.42 EUR |
| NSS60600MZ4T3G |
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Hersteller: ON Semiconductor
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1560+ | 0.42 EUR |
| NSS60600MZ4T3G |
|
Hersteller: onsemi
Description: TRANS PNP 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS PNP 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 7446 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 24+ | 0.89 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.4 EUR |
| NSS60600MZ4T3G |
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Hersteller: onsemi
Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 6.0A
Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 6.0A
auf Bestellung 7535 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.61 EUR |
| 10+ | 1 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.45 EUR |
| 2000+ | 0.4 EUR |
| 4000+ | 0.35 EUR |
| NSS60600MZ4T3G |
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auf Bestellung 3340 Stücke:
Lieferzeit 21-28 Tag (e)