NSS60600MZ4T3G ON Semiconductor
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.25 EUR |
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Technische Details NSS60600MZ4T3G ON Semiconductor
Description: TRANS PNP 60V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223 (TO-261), Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote NSS60600MZ4T3G nach Preis ab 0.29 EUR bis 1.35 EUR
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NSS60600MZ4T3G | Hersteller : onsemi |
 Description: TRANS PNP 60V 6A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60600MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60600MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 3991 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60600MZ4T3G | Hersteller : onsemi |
Description: TRANS PNP 60V 6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 7446 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60600MZ4T3G | Hersteller : onsemi |
Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 6.0A |
auf Bestellung 7624 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60600MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 3340 Stücke: Lieferzeit 21-28 Tag (e) |
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NSS60600MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NSS60600MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| NSS60600MZ4T3G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |