NSS60601MZ4T3G
Produktcode: 173995
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Bipolar-Transistoren NPN
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote NSS60601MZ4T3G nach Preis ab 0.38 EUR bis 1.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NSS60601MZ4T3G | ON Semiconductor |
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 35991 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
NSS60601MZ4T3G | onsemi |
Bipolar Transistors - BJT 60V/6A LOW VCE(SAT) NPN |
auf Bestellung 2196 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NSS60601MZ4T3G | onsemi |
Description: TRANS NPN 60V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
NSS60601MZ4T3G | ON Semiconductor |
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS60601MZ4T3G |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 35991 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1371+ | 0.48 EUR |
| 10000+ | 0.42 EUR |
| NSS60601MZ4T3G |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT 60V/6A LOW VCE(SAT) NPN
Bipolar Transistors - BJT 60V/6A LOW VCE(SAT) NPN
auf Bestellung 2196 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.55 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| 2000+ | 0.46 EUR |
| 4000+ | 0.38 EUR |
| NSS60601MZ4T3G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.9 EUR |
| 18+ | 1.19 EUR |
| 100+ | 0.77 EUR |
| NSS60601MZ4T3G |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)



