NSS60601MZ4T3G ON Semiconductor
auf Bestellung 35991 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1371+ | 0.4 EUR |
| 10000+ | 0.34 EUR |
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Technische Details NSS60601MZ4T3G ON Semiconductor
Description: TRANS NPN 60V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223 (TO-261), Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.
Weitere Produktangebote NSS60601MZ4T3G nach Preis ab 0.32 EUR bis 1.3 EUR
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NSS60601MZ4T3G | Hersteller : onsemi |
 Description: TRANS NPN 60V 6A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 1962 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60601MZ4T3G | Hersteller : onsemi |
Bipolar Transistors - BJT 60V/6A LOW VCE(SAT) NPN |
auf Bestellung 2196 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60601MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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NSS60601MZ4T3G Produktcode: 173995
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Transistoren > Bipolar-Transistoren NPN |
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NSS60601MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NSS60601MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NSS60601MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NSS60601MZ4T3G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NSS60601MZ4T3G | Hersteller : onsemi |
Description: TRANS NPN 60V 6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
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| NSS60601MZ4T3G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Polarisation: bipolar Mounting: SMD Type of transistor: NPN Case: SOT223-4; TO261-4 Kind of package: reel; tape Power dissipation: 2W Collector current: 6A Current gain: 120...360 Collector-emitter voltage: 60V Frequency: 100MHz |
Produkt ist nicht verfügbar |