NST3906DXV6T1 ONSEMI
Hersteller: ONSEMIDescription: ONSEMI - NST3906DXV6T1 - EACH
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 73925 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details NST3906DXV6T1 ONSEMI
Description: TRANS 2PNP 40V 0.2A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 40V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: SOT-563, Part Status: Obsolete.
Weitere Produktangebote NST3906DXV6T1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NST3906DXV6T1 | Hersteller : onsemi |
Description: TRANS 2PNP 40V 0.2A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-563 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NST3906DXV6T1 | Hersteller : onsemi |
Bipolar Transistors - BJT 200mA 40V Dual |
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| NST3906DXV6T1 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT |
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