NST3906MX2T5G onsemi
Hersteller: onsemi
Description: SS SOT883 GP XSTR PBFREE
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 165 mW
Description: SS SOT883 GP XSTR PBFREE
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 165 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.1 EUR |
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Technische Details NST3906MX2T5G onsemi
Description: SS SOT883 GP XSTR PBFREE, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: 3-X2DFN (1x0.6), Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 165 mW.
Weitere Produktangebote NST3906MX2T5G nach Preis ab 0.11 EUR bis 0.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NST3906MX2T5G | Hersteller : onsemi |
Description: SS SOT883 GP XSTR PBFREE Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 165 mW |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NST3906MX2T5G | Hersteller : onsemi |
 Bipolar Transistors - BJT SS SOT883 GP XSTR PBFREE |
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