NST4617MX2T5G onsemi
Hersteller: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.11 EUR |
| 16000+ | 0.095 EUR |
| 24000+ | 0.094 EUR |
| 56000+ | 0.077 EUR |
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Technische Details NST4617MX2T5G onsemi
Description: SS SOT883 GP XSTR 120V, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Frequency - Transition: 112MHz, Supplier Device Package: 3-X2DFN (1x0.6), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 166 mW.
Weitere Produktangebote NST4617MX2T5G nach Preis ab 0.083 EUR bis 0.65 EUR
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NST4617MX2T5G | onsemi |
Description: SS SOT883 GP XSTR 120V Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 112MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 166 mW |
auf Bestellung 104000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NST4617MX2T5G | onsemi |
Bipolar Transistors - BJT 100 mA, 50 V, NPN Bipolar Transistor in SOT-883 100 mA, 50 V |
auf Bestellung 7612 Stücke: Lieferzeit 10-14 Tag (e) |
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| NST4617MX2T5G |
|
Hersteller: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
auf Bestellung 104000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 0.65 EUR |
| 47+ | 0.45 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| NST4617MX2T5G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 100 mA, 50 V, NPN Bipolar Transistor in SOT-883 100 mA, 50 V
Bipolar Transistors - BJT 100 mA, 50 V, NPN Bipolar Transistor in SOT-883 100 mA, 50 V
auf Bestellung 7612 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.52 EUR |
| 11+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.11 EUR |
| 5000+ | 0.083 EUR |