NST846BMX2T5G onsemi
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A 3X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
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Technische Details NST846BMX2T5G onsemi
Description: TRANS NPN 65V 0.1A 3X2DFN, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: 3-X2DFN (1x0.6), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 65 V, Power - Max: 225 mW.
Weitere Produktangebote NST846BMX2T5G nach Preis ab 0.11 EUR bis 0.57 EUR
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NST846BMX2T5G | onsemi |
Description: TRANS NPN 65V 0.1A 3X2DFN Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 225 mW |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NST846BMX2T5G | onsemi |
Bipolar Transistors - BJT 100 mA, 65 V, NPN Bipolar Transistor in SOT-883 100 mA, 65 V |
auf Bestellung 8014 Stücke: Lieferzeit 10-14 Tag (e) |
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| NST846BMX2T5G |
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Hersteller: onsemi
Description: TRANS NPN 65V 0.1A 3X2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
Description: TRANS NPN 65V 0.1A 3X2DFN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 0.52 EUR |
| 66+ | 0.32 EUR |
| 105+ | 0.2 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 2000+ | 0.12 EUR |
| NST846BMX2T5G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 100 mA, 65 V, NPN Bipolar Transistor in SOT-883 100 mA, 65 V
Bipolar Transistors - BJT 100 mA, 65 V, NPN Bipolar Transistor in SOT-883 100 mA, 65 V
auf Bestellung 8014 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.57 EUR |
| 10+ | 0.4 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2500+ | 0.12 EUR |
| 5000+ | 0.11 EUR |