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NSTB60BDW1T1

NSTB60BDW1T1 onsemi


nstb60bdw1t1-d.pdf Hersteller: onsemi
Description: TRANS NPN PREBIAS/PNP SOT363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 250mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
Frequency - Transition: 140MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 11970 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5323+0.1 EUR
Mindestbestellmenge: 5323
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Technische Details NSTB60BDW1T1 onsemi

Description: TRANS NPN PREBIAS/PNP SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 250mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V, Frequency - Transition: 140MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363.

Weitere Produktangebote NSTB60BDW1T1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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NSTB60BDW1T1 Hersteller : ON Semiconductor nstb60bdw1t1-d.pdf
auf Bestellung 2727 Stücke:
Lieferzeit 21-28 Tag (e)
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NSTB60BDW1T1 Hersteller : ONSEMI ONSMS05997-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NSTB60BDW1T1 - NSTB60BDW1T1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 11970 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NSTB60BDW1T1 NSTB60BDW1T1 Hersteller : onsemi nstb60bdw1t1-d.pdf Description: TRANS NPN PREBIAS/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 250mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
Frequency - Transition: 140MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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Im Einkaufswagen  Stück im Wert von  UAH