| Anzahl | Preis |
|---|---|
| 8+ | 0.36 EUR |
| 13+ | 0.22 EUR |
| 100+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.086 EUR |
| 3000+ | 0.074 EUR |
| 6000+ | 0.07 EUR |
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Technische Details NSTB60BDW1T1G onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Supplier Device Package: SC-88/SC70-6/SOT-363, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 22kOhms, Frequency - Transition: 140MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 150mA, Power - Max: 250mW, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSTB60BDW1T1G nach Preis ab 0.095 EUR bis 0.39 EUR
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NSTB60BDW1T1G | onsemi |
 Description: TRANS PREBIAS 1NPN 1PNP SOT-363Supplier Device Package: SC-88/SC70-6/SOT-363 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 250mW Transistor Type: 1 NPN Pre-Biased, 1 PNP Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 3095 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSTB60BDW1T1G |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSTB60BDW1T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 250mW
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 250mW
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3095 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 75+ | 0.24 EUR |
| 120+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.095 EUR |
| NSTB60BDW1T1G |
|
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH