NSV40200UW6T1G onsemi
Hersteller: onsemi
Description: TRANS PNP 40V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 875 mW
Description: TRANS PNP 40V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 6-WDFN (2x2)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 875 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSV40200UW6T1G onsemi
Description: TRANS PNP 40V 2A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: 6-WDFN (2x2), Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 875 mW.
Weitere Produktangebote NSV40200UW6T1G nach Preis ab 0.74 EUR bis 1.37 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NSV40200UW6T1G | Hersteller : onsemi |
Description: TRANS PNP 40V 2A 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: 6-WDFN (2x2) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 875 mW |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSV40200UW6T1G | Hersteller : ON Semiconductor |
auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
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NSV40200UW6T1G | Hersteller : ONSEMI |
Description: ONSEMI - NSV40200UW6T1G - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSV40200UW6T1G | Hersteller : ON Semiconductor | Trans GP BJT PNP 40V 2A 3000mW Automotive 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NSV40200UW6T1G | Hersteller : ON Semiconductor | Trans GP BJT PNP 40V 2A 3000mW Automotive AEC-Q101 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NSV40200UW6T1G | Hersteller : onsemi | Bipolar Transistors - BJT Low VCE(sat) Transistor, PNP, -40 V, 4.0 A |
Produkt ist nicht verfügbar |