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NSVBA114EDXV6T1G

NSVBA114EDXV6T1G onsemi


dta114ed-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT563-6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 136000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4873+0.098 EUR
Mindestbestellmenge: 4873
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Technische Details NSVBA114EDXV6T1G onsemi

Description: TRANS PREBIAS 2PNP 50V SOT563-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-563.

Weitere Produktangebote NSVBA114EDXV6T1G nach Preis ab 0.092 EUR bis 0.71 EUR

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NSVBA114EDXV6T1G NSVBA114EDXV6T1G Hersteller : onsemi DTA114ED_D-1387513.pdf Digital Transistors SS SOT563 RSTR XSTR
auf Bestellung 3779 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.71 EUR
10+0.6 EUR
2000+0.22 EUR
4000+0.11 EUR
8000+0.093 EUR
24000+0.092 EUR
Mindestbestellmenge: 4
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NSVBA114EDXV6T1G NSVBA114EDXV6T1G Hersteller : ON Semiconductor dta114ed-d.pdf Trans Digital BJT PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
Produkt ist nicht verfügbar
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NSVBA114EDXV6T1G NSVBA114EDXV6T1G Hersteller : onsemi dta114ed-d.pdf Description: TRANS PREBIAS 2PNP 50V SOT563-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBA114EDXV6T1G NSVBA114EDXV6T1G Hersteller : onsemi dta114ed-d.pdf Description: TRANS PREBIAS 2PNP 50V SOT563-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVBA114EDXV6T1G Hersteller : ONSEMI dta114ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 500mW; SOT563; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.5W
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 4000pcs.
Produkt ist nicht verfügbar
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