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NSVBC114EPDXV6T1G

NSVBC114EPDXV6T1G onsemi

dtc114ep-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.12 EUR
8000+0.11 EUR
12000+0.1 EUR
20000+0.097 EUR
28000+0.094 EUR
40000+0.09 EUR
100000+0.082 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVBC114EPDXV6T1G onsemi

Description: TRANS PREBIAS 1NPN 1PNP SOT-563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVBC114EPDXV6T1G nach Preis ab 0.13 EUR bis 0.83 EUR

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NSVBC114EPDXV6T1G NSVBC114EPDXV6T1G Hersteller : onsemi dtc114ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 103540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114EPDXV6T1G Hersteller : onsemi dtc114ep-d.pdf Digital Transistors SS SOT563 DUAL RSTR XSTR
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.83 EUR
10+0.59 EUR
100+0.37 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
4000+0.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH