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NSVBC114YPDXV6T1G

NSVBC114YPDXV6T1G onsemi

dtc114yp-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVBC114YPDXV6T1G onsemi

Description: TRANS PREBIAS NPN/PNP 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

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NSVBC114YPDXV6T1G NSVBC114YPDXV6T1G Hersteller : onsemi dtc114yp-d.pdf Digital Transistors Complementary Bipolar Digital Transistor (BRT)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.57 EUR
10+0.35 EUR
100+0.15 EUR
1000+0.12 EUR
4000+0.10 EUR
8000+0.08 EUR
24000+0.08 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114YPDXV6T1G NSVBC114YPDXV6T1G Hersteller : onsemi dtc114yp-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
38+0.47 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH