Produkte > ON SEMICONDUCTOR > NSVBC143TPDXV6T1G
NSVBC143TPDXV6T1G

NSVBC143TPDXV6T1G ON Semiconductor


dtc143tp-d.pdf Hersteller: ON Semiconductor
Trans Digital BJT NPN/PNP 50V 100mA 500mW Automotive 6-Pin SOT-563 T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details NSVBC143TPDXV6T1G ON Semiconductor

Description: TRANS PREBIAS NPN/PNP 50V SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SOT-563, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVBC143TPDXV6T1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSVBC143TPDXV6T1G NSVBC143TPDXV6T1G Hersteller : onsemi dtc143tp-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
NSVBC143TPDXV6T1G Hersteller : onsemi DTC143TP_D-2311083.pdf Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR
Produkt ist nicht verfügbar