NSVBCP5310MTWG onsemi
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
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Technische Details NSVBCP5310MTWG onsemi
Description: TRANS PNP 80V 1A 3WDFNW, Packaging: Cut Tape (CT), Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: 3-WDFNW (2x2), Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 875 mW, Qualification: AEC-Q101.
Weitere Produktangebote NSVBCP5310MTWG nach Preis ab 0.33 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NSVBCP5310MTWG | onsemi |
Bipolar Transistors - BJT 80V 1A PNP WDFNW3 2X2 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVBCP5310MTWG |
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Hersteller: onsemi
Bipolar Transistors - BJT 80V 1A PNP WDFNW3 2X2
Bipolar Transistors - BJT 80V 1A PNP WDFNW3 2X2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.33 EUR |