auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.92 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.26 EUR |
| 9000+ | 0.24 EUR |
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Technische Details NSVBCP5316MTWG onsemi
Description: TRANS PNP 80V 1A 3WDFNW, Packaging: Bulk, Package / Case: 3-WDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 130MHz, Supplier Device Package: 3-WDFNW (2x2), Grade: Automotive, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 875 mW, Qualification: AEC-Q101.
Weitere Produktangebote NSVBCP5316MTWG nach Preis ab 0.29 EUR bis 1.21 EUR
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NSVBCP5316MTWG | Hersteller : onsemi |
 Description: TRANS PNP 80V 1A 3WDFNWPackaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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