NSVBCP68T1G onsemi
Hersteller: onsemi
Description: TRANS NPN 20V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.52 EUR |
| 2000+ | 0.48 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NSVBCP68T1G onsemi
Description: TRANS NPN 20V 1A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V, Frequency - Transition: 60MHz, Supplier Device Package: SOT-223 (TO-261), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 1.5 W, Qualification: AEC-Q101.
Weitere Produktangebote NSVBCP68T1G nach Preis ab 0.51 EUR bis 1.87 EUR
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NSVBCP68T1G | onsemi |
Bipolar Transistors - BJT LOW VOLTAGE-HIGH CURRENT |
auf Bestellung 2001 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBCP68T1G | onsemi |
Description: TRANS NPN 20V 1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NSVBCP68T1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT LOW VOLTAGE-HIGH CURRENT
Bipolar Transistors - BJT LOW VOLTAGE-HIGH CURRENT
auf Bestellung 2001 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.86 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.51 EUR |
| NSVBCP68T1G |
|
Hersteller: onsemi
Description: TRANS NPN 20V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Description: TRANS NPN 20V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 19+ | 1.15 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.58 EUR |