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NSVBCW32LT1G

NSVBCW32LT1G ON Semiconductor


bcw32lt1-d.pdf Hersteller: ON Semiconductor
Trans GP BJT NPN 32V 0.1A 300mW Automotive 3-Pin SOT-23 T/R
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Technische Details NSVBCW32LT1G ON Semiconductor

Description: TRANS NPN 32V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 225 mW.

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NSVBCW32LT1G NSVBCW32LT1G Hersteller : onsemi bcw32lt1-d.pdf Description: TRANS NPN 32V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
NSVBCW32LT1G NSVBCW32LT1G Hersteller : onsemi BCW32LT1_D-2310065.pdf Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 32V
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