| Anzahl | Preis |
|---|---|
| 4+ | 0.76 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.31 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSVBSS63LT1G onsemi
Description: TRANS PNP 100V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V, Frequency - Transition: 95MHz, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 225 mW.
Weitere Produktangebote NSVBSS63LT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
NSVBSS63LT1G | onsemi |
 Description: TRANS PNP 100V 0.1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
NSVBSS63LT1G | onsemi |
Description: TRANS PNP 100V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSVBSS63LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB Mounting: SMD Frequency: 50MHz Application: automotive industry Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.225W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSVBSS63LT1G |
|
Hersteller: onsemi
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVBSS63LT1G |
|
Hersteller: onsemi
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBSS63LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.225W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB
Mounting: SMD
Frequency: 50MHz
Application: automotive industry
Polarisation: bipolar
Type of transistor: PNP
Case: SOT23; TO236AB
Collector current: 0.1A
Power dissipation: 0.225W
Current gain: 30
Collector-emitter voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH