| Anzahl | Preis |
|---|---|
| 5+ | 0.6 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.12 EUR |
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Technische Details NSVBSS63LT1G onsemi
Description: TRANS PNP 100V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V, Frequency - Transition: 95MHz, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 225 mW.
Weitere Produktangebote NSVBSS63LT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NSVBSS63LT1G | Hersteller : onsemi |
 Description: TRANS PNP 100V 0.1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
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NSVBSS63LT1G | Hersteller : onsemi |
Description: TRANS PNP 100V 0.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
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| NSVBSS63LT1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 0.1A; 0.225W; SOT23,TO236AB Mounting: SMD Frequency: 50MHz Application: automotive industry Polarisation: bipolar Type of transistor: PNP Case: SOT23; TO236AB Collector current: 0.1A Power dissipation: 0.225W Current gain: 30 Collector-emitter voltage: 100V Kind of package: reel; tape |
Produkt ist nicht verfügbar |