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NSVDTC123EM3T5G

NSVDTC123EM3T5G onsemi

dtc123e-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 6930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
61+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.1 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVDTC123EM3T5G onsemi

Description: TRANS PREBIAS NPN 50V SOT723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Supplier Device Package: SOT-723, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 260 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.

Weitere Produktangebote NSVDTC123EM3T5G nach Preis ab 0.077 EUR bis 0.44 EUR

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NSVDTC123EM3T5G Hersteller : onsemi DTC123E_D-1387490.pdf Digital Transistors SOT723 BIAS RESISTOR
auf Bestellung 2632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.44 EUR
11+0.27 EUR
100+0.17 EUR
500+0.12 EUR
1000+0.099 EUR
2500+0.097 EUR
5000+0.077 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTC123EM3T5G NSVDTC123EM3T5G Hersteller : onsemi dtc123e-d.pdf Description: TRANS PREBIAS NPN 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-723
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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NSVDTC123EM3T5G Hersteller : ONSEMI dtc123e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Application: automotive industry
Current gain: 8...15
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH