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NSVDTC123JET1G

NSVDTC123JET1G onsemi

dtc123j-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.099 EUR
Mindestbestellmenge: 3000
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Technische Details NSVDTC123JET1G onsemi

Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote NSVDTC123JET1G nach Preis ab 0.079 EUR bis 0.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSVDTC123JET1G NSVDTC123JET1G Hersteller : onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
41+ 0.43 EUR
100+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 28
NSVDTC123JET1G Hersteller : onsemi DTC123J_D-2310909.pdf Bipolar Transistors - Pre-Biased SMALL SIGNAL BIAS RE
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.64 EUR
10+ 0.48 EUR
100+ 0.18 EUR
1000+ 0.13 EUR
3000+ 0.099 EUR
9000+ 0.083 EUR
24000+ 0.079 EUR
Mindestbestellmenge: 5
NSVDTC123JET1G NSVDTC123JET1G Hersteller : ON Semiconductor dtc123j-d.pdf Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R
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