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NSVDTC123JET1G

NSVDTC123JET1G onsemi

dtc123j-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.058 EUR
6000+0.052 EUR
9000+0.049 EUR
15000+0.045 EUR
21000+0.043 EUR
30000+0.041 EUR
75000+0.036 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVDTC123JET1G onsemi

Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Grade: Automotive, Qualification: AEC-Q101, Resistors Included: R1 and R2.

Weitere Produktangebote NSVDTC123JET1G nach Preis ab 0.055 EUR bis 0.3 EUR

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NSVDTC123JET1G NSVDTC123JET1G Hersteller : onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 101950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
100+0.18 EUR
160+0.11 EUR
500+0.08 EUR
1000+0.071 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTC123JET1G Hersteller : onsemi DTC123J_D-1387473.pdf Digital Transistors SMALL SIGNAL BIAS RE
auf Bestellung 10307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.29 EUR
17+0.17 EUR
100+0.11 EUR
500+0.079 EUR
1000+0.07 EUR
3000+0.056 EUR
6000+0.055 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
NSVDTC123JET1G NSVDTC123JET1G Hersteller : ON Semiconductor dtc123j-d.pdf Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R
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