Produkte > ONSEMI > NSVEMC2DXV5T1G
NSVEMC2DXV5T1G

NSVEMC2DXV5T1G onsemi


emc2dxv5t1-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-553
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1109 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NSVEMC2DXV5T1G onsemi

Description: TRANS PREBIAS NPN/PNP 50V SOT553, Packaging: Tape & Reel (TR), Package / Case: SOT-553, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction), Power - Max: 500mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SOT-553, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVEMC2DXV5T1G nach Preis ab 0.18 EUR bis 0.70 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NSVEMC2DXV5T1G Hersteller : onsemi EMC2DXV5T1_D-1803246.pdf Bipolar Transistors - Pre-Biased SSP COMMON BASE BRT
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.70 EUR
10+0.57 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.22 EUR
4000+0.19 EUR
8000+0.18 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NSVEMC2DXV5T1G NSVEMC2DXV5T1G Hersteller : onsemi emc2dxv5t1-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT553
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-553
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH