NSVMMUN2132LT1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP - Pre-Biased
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Technische Details NSVMMUN2132LT1G onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Transistor Type: PNP - Pre-Biased.
Weitere Produktangebote NSVMMUN2132LT1G nach Preis ab 0.042 EUR bis 0.51 EUR
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NSVMMUN2132LT1G | onsemi |
Digital Transistors SS BR XSTR PNP 50V |
auf Bestellung 6725 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMMUN2132LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V |
auf Bestellung 8836 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 49948 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSVMMUN2132LT1G |
|
Hersteller: onsemi
Digital Transistors SS BR XSTR PNP 50V
Digital Transistors SS BR XSTR PNP 50V
auf Bestellung 6725 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 0.29 EUR |
| 17+ | 0.17 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.056 EUR |
| 3000+ | 0.049 EUR |
| 6000+ | 0.042 EUR |
| NSVMMUN2132LT1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Description: TRANS PREBIAS PNP 50V SOT23-3
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
auf Bestellung 8836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 51+ | 0.35 EUR |
| 104+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.099 EUR |
| NSVMMUN2132LT1G |
|
auf Bestellung 49948 Stücke:
Lieferzeit 21-28 Tag (e)