NSVMMUN2212LT1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 108+ | 0.16 EUR |
| 176+ | 0.1 EUR |
| 500+ | 0.073 EUR |
| 1000+ | 0.064 EUR |
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Technische Details NSVMMUN2212LT1G onsemi
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Qualification: AEC-Q101, Resistors Included: R1 and R2.
Weitere Produktangebote NSVMMUN2212LT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| NSVMMUN2212LT1G | ON Semiconductor |
Транзистор NPN з BRT, Uceo, В = 50, Ic = 100 мА, hFE = 60, Icutoff-max = 500 нА, Uceo(sat), В @ Ic, Ib = 0,25 @ 300 uA, 10 mA, Р, Вт = 0,246, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23 Очікується: 25 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 5 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| NSVMMUN2212LT1G |
|
Hersteller: ON Semiconductor
Транзистор NPN з BRT, Uceo, В = 50, Ic = 100 мА, hFE = 60, Icutoff-max = 500 нА, Uceo(sat), В @ Ic, Ib = 0,25 @ 300 uA, 10 mA, Р, Вт = 0,246, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23 Очікується: 25 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Транзистор NPN з BRT, Uceo, В = 50, Ic = 100 мА, hFE = 60, Icutoff-max = 500 нА, Uceo(sat), В @ Ic, Ib = 0,25 @ 300 uA, 10 mA, Р, Вт = 0,246, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: SOT-23 Очікується: 25 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 5 Stücke:
Im Einkaufswagen
Stück im Wert von UAH