Produkte > ONSEMI > NSVMMUN2236LT1G
NSVMMUN2236LT1G

NSVMMUN2236LT1G onsemi


DTC115E_D-2310748.pdf Hersteller: onsemi
Digital Transistors NPN DIGITAL TRANSISTOR (B
auf Bestellung 10238 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.52 EUR
10+ 0.36 EUR
100+ 0.15 EUR
1000+ 0.1 EUR
3000+ 0.081 EUR
9000+ 0.07 EUR
24000+ 0.062 EUR
Mindestbestellmenge: 6
Produktrezensionen
Produktbewertung abgeben

Technische Details NSVMMUN2236LT1G onsemi

Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SOT-23-3 (TO-236), Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 246 mW, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVMMUN2236LT1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSVMMUN2236LT1G NSVMMUN2236LT1G Hersteller : onsemi dtc115e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
NSVMMUN2236LT1G NSVMMUN2236LT1G Hersteller : onsemi dtc115e-d.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
NSVMMUN2236LT1G NSVMMUN2236LT1G Hersteller : ON Semiconductor dtc115e-d.pdf NPN Transistors with Monolithic Bias Resistor Network
Produkt ist nicht verfügbar