
NSVMUN2233T1G onsemi

Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
auf Bestellung 264000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
11539+ | 0.05 EUR |
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Technische Details NSVMUN2233T1G onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Supplier Device Package: SC-59, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 230 mW, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote NSVMUN2233T1G nach Preis ab 0.04 EUR bis 0.36 EUR
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NSVMUN2233T1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN2233T1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN2233T1G | Hersteller : ON Semiconductor |
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auf Bestellung 2437 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMUN2233T1G | Hersteller : ON Semiconductor |
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auf Bestellung 2437 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMUN2233T1G | Hersteller : onsemi |
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auf Bestellung 13871 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN2233T1G | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 168000 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMUN2233T1G | Hersteller : ON Semiconductor |
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NSVMUN2233T1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |