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NSVMUN5111DW1T3G

NSVMUN5111DW1T3G onsemi


dta114ed-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 70000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.08 EUR
20000+0.07 EUR
30000+0.07 EUR
50000+0.06 EUR
70000+0.06 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVMUN5111DW1T3G onsemi

Description: TRANS PREBIAS 2PNP 50V SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVMUN5111DW1T3G nach Preis ab 0.07 EUR bis 0.56 EUR

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NSVMUN5111DW1T3G NSVMUN5111DW1T3G Hersteller : onsemi dta114ed-d.pdf Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 79900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
66+0.27 EUR
106+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.10 EUR
5000+0.08 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5111DW1T3G NSVMUN5111DW1T3G Hersteller : onsemi DTA114ED_D-2310691.pdf Digital Transistors SS SC88 BR XSTR PNP 50V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.56 EUR
10+0.38 EUR
100+0.15 EUR
1000+0.10 EUR
2500+0.09 EUR
10000+0.07 EUR
20000+0.07 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH