NSVMUN5216T1G onsemi
Hersteller: onsemiDescription: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.064 EUR |
| 6000+ | 0.057 EUR |
| 9000+ | 0.054 EUR |
| 15000+ | 0.05 EUR |
| 21000+ | 0.048 EUR |
| 30000+ | 0.045 EUR |
| 75000+ | 0.04 EUR |
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Produktbewertung abgeben
Technische Details NSVMUN5216T1G onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Supplier Device Package: SC-70-3 (SOT323), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 202 mW, Resistor - Base (R1): 4.7 kOhms, Qualification: AEC-Q101.
Weitere Produktangebote NSVMUN5216T1G nach Preis ab 0.051 EUR bis 0.32 EUR
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NSVMUN5216T1G | Hersteller : onsemi |
Digital Transistors NPN Bipolar Digital Transistor (BRT) |
auf Bestellung 14980 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN5216T1G | Hersteller : onsemi |
Description: NPN BIPOLAR DIGITAL TRANSISTOR (Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMUN5216T1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 102000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMUN5216T1G | Hersteller : ONSEMI |
Description: ONSEMI - NSVMUN5216T1G - SCHOTTKY RECTIFIER DIODEStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |