Produkte > ONSEMI > NSVMUN5216T1G
NSVMUN5216T1G

NSVMUN5216T1G onsemi

dtc143t-d.pdf Hersteller: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.06 EUR
9000+0.05 EUR
15000+0.05 EUR
21000+0.05 EUR
30000+0.05 EUR
75000+0.04 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NSVMUN5216T1G onsemi

Description: NPN BIPOLAR DIGITAL TRANSISTOR (, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Supplier Device Package: SC-70-3 (SOT323), Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 202 mW, Resistor - Base (R1): 4.7 kOhms, Qualification: AEC-Q101.

Weitere Produktangebote NSVMUN5216T1G nach Preis ab 0.04 EUR bis 0.35 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NSVMUN5216T1G NSVMUN5216T1G Hersteller : onsemi dtc143t-d.pdf Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5216T1G NSVMUN5216T1G Hersteller : onsemi ONSMS33917-1.pdf?t.download=true&u=5oefqw dtc143t-d.pdf Digital Transistors NPN Bipolar Digital Transistor (BRT)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.35 EUR
12+0.24 EUR
100+0.15 EUR
1000+0.07 EUR
3000+0.06 EUR
9000+0.05 EUR
24000+0.04 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5216T1G Hersteller : onsemi ONSMS33917-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11539+0.05 EUR
Mindestbestellmenge: 11539
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5216T1G Hersteller : ONSEMI DTC143T-D.PDF Description: ONSEMI - NSVMUN5216T1G - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 102000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH