Produkte > ONSEMI > NSVMUN5331DW1T1G
NSVMUN5331DW1T1G

NSVMUN5331DW1T1G onsemi


dtc123ep-d.pdf Hersteller: onsemi
Description: TRANS NPN/PNP 50V BIPO SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NSVMUN5331DW1T1G onsemi

Description: TRANS NPN/PNP 50V BIPO SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 2.2kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVMUN5331DW1T1G nach Preis ab 0.06 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NSVMUN5331DW1T1G NSVMUN5331DW1T1G Hersteller : onsemi dtc123ep-d.pdf Description: TRANS NPN/PNP 50V BIPO SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5331DW1T1G Hersteller : onsemi dtc123ep-d.pdf Digital Transistors SS SC88 BR XSTR DUAL
auf Bestellung 13970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.35 EUR
12+0.24 EUR
100+0.11 EUR
1000+0.10 EUR
3000+0.07 EUR
24000+0.06 EUR
99000+0.06 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5331DW1T1G NSVMUN5331DW1T1G Hersteller : ON Semiconductor dtc123ep-d.pdf NPN and PNP Transistors with Monolithic Bias Resistor Network
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH