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NSVMUN5331DW1T1G

NSVMUN5331DW1T1G onsemi

dtc123ep-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
73+0.24 EUR
117+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NSVMUN5331DW1T1G onsemi

Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 2.2kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVMUN5331DW1T1G nach Preis ab 0.081 EUR bis 0.41 EUR

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NSVMUN5331DW1T1G Hersteller : onsemi DTC123EP-D.PDF Digital Transistors SS SC88 BR XSTR DUAL
auf Bestellung 13970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.41 EUR
12+0.24 EUR
100+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
3000+0.081 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5331DW1T1G NSVMUN5331DW1T1G Hersteller : ON Semiconductor dtc123ep-d.pdf NPN and PNP Transistors with Monolithic Bias Resistor Network
Produkt ist nicht verfügbar
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NSVMUN5331DW1T1G NSVMUN5331DW1T1G Hersteller : onsemi dtc123ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVMUN5331DW1T1G Hersteller : ONSEMI dtc123ep-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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