NSVMUN5332DW1T1G onsemi
Hersteller: onsemiDescription: TRANS NPN/PNP PREBIAS 0.25W SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2545 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 64+ | 0.28 EUR |
| 102+ | 0.17 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |
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Produktbewertung abgeben
Technische Details NSVMUN5332DW1T1G onsemi
Description: TRANS NPN/PNP PREBIAS 0.25W SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NSVMUN5332DW1T1G nach Preis ab 0.062 EUR bis 0.42 EUR
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| NSVMUN5332DW1T1G | Hersteller : onsemi |
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auf Bestellung 10850 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN5332DW1T1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R |
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NSVMUN5332DW1T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP PREBIAS 0.25W SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |