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NSVMUN5336DW1T1G

NSVMUN5336DW1T1G ON Semiconductor


dtc115ep-d.pdf Hersteller: ON Semiconductor
Trans Digital BJT NPN/PNP 50V 100mA 385mW Automotive 6-Pin SC-88 T/R
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Technische Details NSVMUN5336DW1T1G ON Semiconductor

Description: COMPLEMENTARY DIGITAL TRA, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Resistor - Base (R1): 100kOhms, Resistor - Emitter Base (R2): 100kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NSVMUN5336DW1T1G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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NSVMUN5336DW1T1G NSVMUN5336DW1T1G Hersteller : onsemi dtc115ep-d.pdf Description: COMPLEMENTARY DIGITAL TRA
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5336DW1T1G NSVMUN5336DW1T1G Hersteller : onsemi dtc115ep-d.pdf Description: COMPLEMENTARY DIGITAL TRA
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 100kOhms
Resistor - Emitter Base (R2): 100kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5336DW1T1G NSVMUN5336DW1T1G Hersteller : ON Semiconductor DTC115EP-D-1281706.pdf Bipolar Transistors - Pre-Biased COMPLEMENTARY DIGITAL TRA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH