NSVT5401MR6T1G onsemi
Hersteller: onsemi
Description: TRANS 2PNP 150V 600MA TSOT-23-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TSOT-23-6
Grade: Automotive
Qualification: AEC-Q101
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Technische Details NSVT5401MR6T1G onsemi
Description: TRANS 2PNP 150V 600MA TSOT-23-6, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: 2 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 700mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 150V, Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TSOT-23-6, Grade: Automotive, Qualification: AEC-Q101.
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NSVT5401MR6T1G | onsemi |
Bipolar Transistors - BJT PNP GENERAL-PURPOSE AMPLIFIER |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NSVT5401MR6T1G |
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Hersteller: onsemi
Bipolar Transistors - BJT PNP GENERAL-PURPOSE AMPLIFIER
Bipolar Transistors - BJT PNP GENERAL-PURPOSE AMPLIFIER
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
