auf Bestellung 2206 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
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Technische Details NSVT5551MR6T1G onsemi
Description: TRANS 2NPN 160V 600MA TSOT-23-6, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: 2 NPN, Operating Temperature: 150°C (TJ), Power - Max: 700mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 160V, Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: TSOT-23-6, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NSVT5551MR6T1G nach Preis ab 0.33 EUR bis 1.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NSVT5551MR6T1G | Hersteller : onsemi |
 Description: TRANS 2NPN 160V 600MA TSOT-23-6Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN Operating Temperature: 150°C (TJ) Power - Max: 700mW Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TSOT-23-6 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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