NSVT856MTWFTBG onsemi
| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.52 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
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Technische Details NSVT856MTWFTBG onsemi
Description: TRANS PNP 65V 0.1A 3XDFNW, Qualification: AEC-Q101, Power - Max: 650 mW, Voltage - Collector Emitter Breakdown (Max): 65 V, Current - Collector (Ic) (Max): 100 mA, Grade: Automotive, Supplier Device Package: 3-XDFNW (1x1), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 900mV @ 5mA, 100mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote NSVT856MTWFTBG nach Preis ab 0.25 EUR bis 0.93 EUR
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NSVT856MTWFTBG | Hersteller : onsemi |
 Description: TRANS PNP 65V 0.1A 3XDFNWPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 3-XDFNW (1x1) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 650 mW Qualification: AEC-Q101 |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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