NSVTB60BDW1T1G ON Semiconductor
Hersteller: ON SemiconductorPNP General Purpose and NPN Bias Resistor Transistor Combination Automotive AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 9000+ | 0.12 EUR |
| 15000+ | 0.11 EUR |
| 21000+ | 0.1 EUR |
| 24000+ | 0.096 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSVTB60BDW1T1G ON Semiconductor
Description: TRANS NPN/PNP COMBO SC88-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 250mW, Current - Collector (Ic) (Max): 150mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NSVTB60BDW1T1G nach Preis ab 0.096 EUR bis 0.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
NSVTB60BDW1T1G | Hersteller : ON Semiconductor |
PNP General Purpose and NPN Bias Resistor Transistor Combination Automotive AEC-Q101 |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
NSVTB60BDW1T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP COMBO SC88-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 250mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
NSVTB60BDW1T1G | Hersteller : ON Semiconductor |
PNP General Purpose and NPN Bias Resistor Transistor Combination |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
NSVTB60BDW1T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP COMBO SC88-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 250mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||
| NSVTB60BDW1T1G | Hersteller : ON Semiconductor |
Bipolar Transistors - BJT PNP GENERAL PURPOSE |
Produkt ist nicht verfügbar |