NTB150N65S3HF onsemi
Hersteller: onsemiDescription: MOSFET N-CH 650V 24A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 540µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.91 EUR |
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Technische Details NTB150N65S3HF onsemi
Description: MOSFET N-CH 650V 24A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 5V @ 540µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V.
Weitere Produktangebote NTB150N65S3HF nach Preis ab 4.31 EUR bis 8.66 EUR
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NTB150N65S3HF | Hersteller : onsemi |
Description: MOSFET N-CH 650V 24A D2PAK-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 5V @ 540µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1985 pF @ 400 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB150N65S3HF | Hersteller : onsemi |
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auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTB150N65S3HF | Hersteller : ON Semiconductor |
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auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) |
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NTB150N65S3HF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| NTB150N65S3HF | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK Type of transistor: N-MOSFET Power dissipation: 192W Case: D2PAK Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 60A Drain-source voltage: 650V Drain current: 24A On-state resistance: 0.15Ω Polarisation: unipolar Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| NTB150N65S3HF | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK Type of transistor: N-MOSFET Power dissipation: 192W Case: D2PAK Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 60A Drain-source voltage: 650V Drain current: 24A On-state resistance: 0.15Ω Polarisation: unipolar |
Produkt ist nicht verfügbar |