NTB45N06T4G ON Semiconductor
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details NTB45N06T4G ON Semiconductor
Description: MOSFET N-CH 60V 45A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V, Power Dissipation (Max): 2.4W (Ta), 125W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D²PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V.
Weitere Produktangebote NTB45N06T4G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
NTB45N06T4G | Hersteller : onsemi |
 Description: MOSFET N-CH 60V 45A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
NTB45N06T4G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 45A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 22.5A, 10V Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
NTB45N06T4G | Hersteller : onsemi |
MOSFET 60V 45A N-Channel |
Produkt ist nicht verfügbar |
|
| NTB45N06T4G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; 125W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |